The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2016

Filed:

Dec. 30, 2011
Applicants:

Mehrdad M. Moslehi, Los Altos, CA (US);

Virendra V. Rana, Los Gatos, CA (US);

Pranav Anbalagan, San Jose, CA (US);

Inventors:

Mehrdad M. Moslehi, Los Altos, CA (US);

Virendra V. Rana, Los Gatos, CA (US);

Pranav Anbalagan, San Jose, CA (US);

Assignee:

Solexel, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0236 (2006.01); H01L 31/068 (2012.01); H01L 21/225 (2006.01); H01L 21/268 (2006.01); H01L 31/0224 (2006.01); H01L 31/072 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/068 (2013.01); H01L 21/2254 (2013.01); H01L 21/268 (2013.01); H01L 31/02363 (2013.01); H01L 31/022441 (2013.01); H01L 31/072 (2013.01); H01L 31/1804 (2013.01); H01L 31/1892 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

Methods for laser irradiation aluminum doping for monocrystalline silicon substrates are provided. According to one aspect of the disclosed subject matter, aluminum metal contacts are formed directly on a surface of a monocrystalline silicon substrate. The aluminum metal contact is selectively heated via laser irradiation, thereby causing the aluminum and a portion of the monocrystalline silicon substrate in proximity to the aluminum to reach a temperature sufficient to allow at least a portion of the silicon to dissolve in the aluminum. The aluminum and the portion of the monocrystalline silicon substrate in proximity to the aluminum is allowed to cool, thereby forming an aluminum-rich doped silicon layer on the monocrystalline silicon substrate.


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