The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Jul. 08, 2013
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An n-type semiconductor substrate () includes an active region and a terminal region disposed outside the active region. A p-type anode layer () is formed in a portion of an upper surface of the n-type semiconductor substrate () in the active region. A plurality of p-type guard ring layers () are formed in a portion of the upper surface of the n-type semiconductor substrate () in the terminal region. An n-type cathode layer () is formed in a lower surface of the n-type semiconductor substrate (). An anode electrode () is connected to the p-type anode layer (). A metallic cathode electrode () is connected to the n-type cathode layer (). A recess () is formed by trenching the n-type cathode layer () in the terminal region. The cathode electrode () is also formed in the recess ().