The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Dec. 14, 2012
Altera Corporation, San Jose, CA (US);
Albert Ratnakumar, San Jose, CA (US);
Yanzhong Xu, Santa Clara, CA (US);
Altera Corporation, San Jose, CA (US);
Abstract
Integrated circuits with bipolar transistors are provided. In one embodiment, a bipolar transistor may include an emitter region, a first base region that surrounds the emitter region, a collector region that surrounds the first base region, and a second base region that surrounds the collector region. Respective well taps may be formed within the emitter, collector, and the second base regions. A deep doped well having the same doping type as the base regions may extend beneath the emitter, collector, and base regions. In another embodiment, the bipolar transistor may include an emitter region, a base region that surrounds the emitter region, and a collector region that surrounds the base region. Respective well taps may be formed within the emitter, base, and collector regions. A deep doped well having the same doping type as the base region may extend beneath the emitter and only a portion of the base region.