The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Nov. 25, 2014
Applicant:
SK Hynix Inc., Icheon, KR;
Inventors:
Assignee:
SK HYNIX INC., Icheon, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/84 (2006.01); G11C 7/06 (2006.01); G11C 8/10 (2006.01); H01L 21/265 (2006.01); H01L 29/36 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66484 (2013.01); G11C 7/06 (2013.01); G11C 8/10 (2013.01); H01L 21/265 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/36 (2013.01); H01L 2029/7857 (2013.01);
Abstract
A junctionless semiconductor device having a buried gate, a module and system each having the same, and a method for forming the semiconductor device are disclosed. A source, a drain, and a body of a semiconductor device having a buried gate are doped with the same type of impurities, so that the junctionless semiconductor device does not include a PN junction between the source and the body or between the body and the drain. As a result, a leakage current caused by GIDL is reduced so that operation characteristics of the semiconductor device are improved and the size of a current-flowing region is increased, resulting in an increased operation current.