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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9455264 B1

PDFFull Text
Date of Patent:
Sep. 27, 2016

Filed:

Jul. 01, 2015

Semiconductor device and manufacturing method thereof

Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Tatsunori Kaneoka, Kawasaki, JP;

Takaaki Kawahara, Kawasaki, JP;

Assignee:

Renesas Electronics Corporation, Tokyo, JP;

Attorney:

Shapiro, Gabor and Rosenberger, PLLC

Primary Examiner:

Khaja Ahmad

Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 21/02 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 29/788 (2006.01); H01L 29/792 (2006.01); H01L 29/66 (2006.01); H01L 21/3213 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1157 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/2855 (2013.01); H01L 21/28273 (2013.01); H01L 21/28282 (2013.01); H01L 21/28556 (2013.01); H01L 21/28568 (2013.01); H01L 21/32133 (2013.01); H01L 29/401 (2013.01); H01L 29/4234 (2013.01); H01L 29/42324 (2013.01); H01L 29/42344 (2013.01); H01L 29/42348 (2013.01); H01L 29/511 (2013.01); H01L 29/518 (2013.01); H01L 29/66825 (2013.01); H01L 29/66833 (2013.01); H01L 29/7881 (2013.01); H01L 29/792 (2013.01); H01L 27/11521 (2013.01); H01L 27/11568 (2013.01);
Abstract

A semiconductor device with a nonvolatile memory is provided which has improved electric performance. A memory gate electrode is formed over a semiconductor substrate via an insulating film. The insulating film is an insulating film having a charge storage portion therein, and includes a first silicon oxide film, a silicon nitride film over the first silicon oxide film, and a second silicon oxide film over the silicon nitride film. Metal elements exist between the silicon nitride film and the second silicon oxide film, or in the silicon nitride film at a surface density of 1×10to 2×10atoms/cm.

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