The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
May. 19, 2015
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Han-Jin Lim, Seoul, KR;
Youn-Soo Kim, Yongin-si, KR;
Hyun Park, Suwon-si, KR;
Soon-Gun Lee, Hwaseong-si, KR;
Eun-Ae Cho, Seoul, KR;
Chin-Moo Cho, Seoul, KR;
Sung-Jin Kim, Suwon-si, KR;
Seok-Woo Nam, Seongnam-si, KR;
Abstract
A semiconductor device includes a capacitor with reduced oxygen defects at an interface between a dielectric layer and an electrode of the capacitor. The semiconductor device includes a lower metal layer; a dielectric layer on the lower metal layer and containing a first metal; a sacrificial layer on the dielectric layer and containing a second metal; and an upper metal layer on the sacrificial layer. An electronegativity of the second metal in the sacrificial layer is greater than an electronegativity of the first metal in the dielectric layer.