The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Sep. 14, 2015
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/8234 (2006.01); H01L 21/28 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823462 (2013.01); H01L 21/28202 (2013.01); H01L 29/1608 (2013.01);
Abstract
When a gate insulating film is formed on a silicon carbide substrate, the silicon carbide substrate is first oxidized with an oxidation reactant gas to form the gate insulating film on the surface of the silicon carbide substrate. The silicon carbide substrate on which the gate insulating film has been formed is nitrided with a nitriding reactant gas. The oxidation and the nitriding are performed continuously in the same diffusion furnace while a temperature of 1200° C. to 1300° C. inclusive is maintained.