The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Sep. 21, 2015
Gwangju Institute of Science and Technology, Gwangju, KR;
Dong-Seon Lee, Gwangju, KR;
Dong-Ju Seo, Gwangju, KR;
Jun-Youb Lee, Gwangju, KR;
Chang-Mo Kang, Gwangju, KR;
Won-Seok Seong, Gwangju, KR;
Mun-Do Park, Gwangju, KR;
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY, Gwangju, KR;
Abstract
Disclosed is a method for growing a nitride-based semiconductor with high quality, the method including: forming a first mask layer on a substrate and forming a second mask layer on the first mask layer; performing dry etching on the first mask layer and the second mask layer to form an opening in which a part of the substrate is exposed; performing selective wet etching on the first mask layer in the opening to form a recess in which a part of the substrate is exposed; depositing a third mask layer in the recess; and growing a nitride-based semiconductor from the exposed part of the substrate on sides of the third mask layer and expanding the growth via the opening.