The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Nov. 25, 2015
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Centre National DE LA Recherche Scientifique (Cnrs), Paris, FR;
Universite Joseph Fourier Grenoble, Grenoble, FR;
Université Paris Sud, Orsay, FR;
Bernard Dieny, Lans en Vercors, FR;
Ricardo Sousa, Grenoble, FR;
Bertrand Lacoste, Rion des Landes, FR;
Thibaut Devolder, Massy, FR;
COMMISSARIAT A L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES, Paris, FR;
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIC (CNRS), Paris, FR;
UNIVERSITE JOSEPH FOURIER GRENOBLE, Grenoble, FR;
UNIVERSITÉPARIS SUD, Orsay, FR;
Abstract
A magnetic device includes a first magnetic layer, known as storage layer, having a uniaxial anisotropy with an easy magnetization axis in the plane of the storage layer and having a magnetization of variable direction having two positions of equilibrium along the easy magnetization axis, a second magnetic layer, known as electron spin polarization layer, having a magnetization perpendicular to that of the storage layer and situated out of plane of the electron spin polarization layer, a device configured to make circulate in the layers, and perpendicularly thereto, a current to switch from one position of equilibrium of the direction of magnetization of the storage layer to the other. The device further includes a device to apply a magnetic field, known as transverse field, the direction of which is substantially parallel to the plane of the storage layer and substantially perpendicular to the easy magnetization axis of the storage layer.