The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

Dec. 03, 2015
Applicant:

Bae Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);

Inventors:

Joseph D. Cali, Nashua, NH (US);

Lawrence J. Kushner, Andover, MA (US);

Steven E. Turner, Nashua, NH (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03M 1/66 (2006.01); H03M 1/06 (2006.01); H01L 29/737 (2006.01); H01L 29/73 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H03M 1/0626 (2013.01); H01L 27/0605 (2013.01); H01L 27/0617 (2013.01); H01L 29/73 (2013.01); H01L 29/737 (2013.01); H03M 1/66 (2013.01);
Abstract

Techniques are provided for a switched output digital to analog converter employing an N-path cascode output switch. An example system may include a plurality of cascode transistors coupled in parallel to an output stage of a current mode digital to analog converter (DAC) circuit. The system may also include a plurality of control ports, each of the control ports coupled to a gate of one of the cascode transistors. The system may further include a plurality of output ports, each output port coupled to one of the cascode transistors. The cascode transistors are configured to switch the output stage of the DAC to the output port of the transistor in response to a routing control signal applied to the control port of the transistor. The cascode transistors are High Electron Mobility Transistors (HEMT) fabricated from Gallium Nitride.


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