The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Mar. 13, 2013
Applicant:
University of Utah Research Foundation, Salt Lake City, UT (US);
Inventors:
Faisal Khan, Salt Lake City, UT (US);
Abusaleh Imtiaz, Salt Lake City, UT (US);
Assignee:
University of Utah Research Foundation, Salt Lake City, UT (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 3/335 (2006.01); H03H 9/00 (2006.01); H02M 7/538 (2007.01); H03H 9/17 (2006.01); H02M 7/48 (2007.01);
U.S. Cl.
CPC ...
H02M 7/538 (2013.01); H02M 2007/4815 (2013.01); H03H 9/173 (2013.01); Y02B 70/1441 (2013.01);
Abstract
An on-chip power converter and an on-chip switching power supply implemented using a film bulk acoustic resonator (FBAR) in place of an inductor. This MEMS device offers high inductance density and high Q factor. FBARs can be conveniently fabricated in a CMOS compatible process. FBARs also shows better EMI results than conventional inductors.