The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

Jun. 11, 2015
Applicant:

National Tsing Hua University, Hsinchu, TW;

Inventors:

Tri-Rung Yew, Hsinchu, TW;

Ying-Chan Hung, Xihu Township, TW;

Tsang-Hsuan Wang, Kaohsiung, TW;

Pin Chang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01C 17/06 (2006.01);
U.S. Cl.
CPC ...
H01L 45/146 (2013.01); H01L 45/122 (2013.01); H01L 45/142 (2013.01);
Abstract

A multilayer-stacked resistive random access memory device includes: first and second electrode layers; a resistive oxide layer which is electrically coupled to the first and second electrode layers, which exhibits resistive switching characteristics and which includes a metal oxide containing a first metal selected from the group consisting of W, Ti, Zr, Sn, Ta, Ni, Ag, Cu, Co, Hf, Ru, Mo, Cr, Fe, Al, and combinations thereof; and a sulfide layer contacting the resistive oxide layer and including a metal sulfide that contains a second metal that is the same as the first metal.


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