The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Jul. 08, 2015
Applicant:
Hgst, Inc., San Jose, CA (US);
Inventors:
Mac D. Apodaca, San Jose, CA (US);
Daniel R. Shepard, North Hampton, NH (US);
Assignee:
HGST, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 45/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); G11C 13/0004 (2013.01); G11C 13/0069 (2013.01); H01L 27/2409 (2013.01); H01L 27/2427 (2013.01); H01L 45/06 (2013.01); H01L 45/124 (2013.01); H01L 45/1246 (2013.01); H01L 45/144 (2013.01); H01L 45/1675 (2013.01); G11C 2013/0078 (2013.01);
Abstract
In various embodiments, a memory storage element for storing two or more bits of information is formed by connecting two resistive change elements in series whereby the first resistive change element is made of a first material and the second resistive change element is made of a second material and the melting point of the first resistive change element material is greater than the melting point of the second resistive change element material such that the set and reset states of the two elements can be written and read.