The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Sep. 05, 2013
Applicant:
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Inventor:
Satoshi Komada, Osaka, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/02 (2010.01); H01L 33/32 (2010.01); H01L 33/20 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/325 (2013.01); H01L 33/025 (2013.01); H01L 33/20 (2013.01); H01L 33/007 (2013.01);
Abstract
A nitride semiconductor light-emitting element including a high concentration silicon-doped layer doped with silicon at a high concentration of 2×10atoms/cm, and a dislocation reduction layer for laterally bending a threading dislocation on the high concentration silicon-doped layer.