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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9450141 B1

PDFFull Text
Date of Patent:
Sep. 20, 2016

Filed:

Aug. 01, 2013

Method for separating growth substrate, method for light-emitting diode, and light-emitting diode manufactured using methods

Applicant:

Seoul Viosys Co., Ltd., Ansan-si, KR;

Inventors:

Jeong Hun Heo, Ansan-si, KR;

Joo Won Choi, Ansan-si, KR;

Choong Min Lee, Ansan-si, KR;

Young Wug Kim, Ansan-si, KR;

Su Jin Shin, Ansan-si, KR;

Su Youn Hong, Ansan-si, KR;

Assignee:

SEOUL VIOSYS CO., LTD., Ansan-Si, KR;

Attorney:

Perkins Coie LLP

Primary Examiner:

Dao H Nguyen

Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 27/15 (2006.01); H01L 21/02 (2006.01); H01L 33/20 (2010.01); H01L 33/46 (2010.01); H01L 33/12 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0079 (2013.01); H01L 33/0075 (2013.01); H01L 33/0095 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01); H01L 33/46 (2013.01); H01L 33/12 (2013.01); H01L 2933/0025 (2013.01);
Abstract

Disclosed are a method for separating a growth substrate, a method for manufacturing a light-emitting diode, and the light-emitting diode. The method for separating a growth substrate, according to one embodiment, comprises: preparing a growth substrate; forming a sacrificial layer and a mask pattern on the growth substrate; etching the sacrificial layer by using electrochemical etching (ECE); covering the mask pattern, and forming a plurality of nitride semiconductor stacking structures which are separated from each other by an element separation area; attaching a support substrate to the plurality of semiconductor stacking structures, wherein the support substrate has a plurality of through-holes connected to the element separation area; and separating the growth substrate from the nitride semiconductor stacking structures.

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