The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

Nov. 25, 2013
Applicants:

Shunichi Sato, Miyagi, JP;

Nobuhiko Nishiyama, Tokyo, JP;

Inventors:

Shunichi Sato, Miyagi, JP;

Nobuhiko Nishiyama, Tokyo, JP;

Assignee:

RICOH COMPANY, LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); H01L 31/0687 (2012.01); H01L 31/0352 (2006.01); H01L 31/043 (2014.01);
U.S. Cl.
CPC ...
H01L 31/1892 (2013.01); H01L 31/035236 (2013.01); H01L 31/043 (2014.12); H01L 31/0687 (2013.01); H01L 31/06875 (2013.01); H01L 31/1804 (2013.01); H01L 31/1852 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract

A photovoltaic cell manufacturing method includes depositing a first buffer layer for performing lattice relaxation on a first silicon substrate; depositing a first photoelectric conversion cell on the first buffer layer, the first photoelectric conversion cell being formed with a compound semiconductor including a pn junction, and the first photoelectric conversion cell having a lattice constant that is higher than that of silicon; connecting a support substrate to the first photoelectric conversion cell to form a first layered body; and removing the first buffer layer and the first silicon substrate from the first layered body.


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