The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Aug. 07, 2015
Fuji Electric Co., Ltd., Kawasaki, JP;
Ryouichi Kawano, Matsumoto, JP;
Takashi Shiigi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
The semiconductor device includes a p-anode region disposed on an n-drift region, and a p-diffusion region disposed so as to be in contact with the p-anode region on the n-drift region. A resistance region disposed so as to be in contact with the p-diffusion region on an nregion, a plurality of p-guard ring regions, and a stopper region disposed away from the p-guard ring regions are provided. By providing the p-diffusion region, withdrawal of holes that concentrate to the p-anode region at the time of reverse recovery is suppressed, so that the semiconductor device has a high reverse recovery tolerance.