The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Apr. 16, 2014
Boe Technology Group Co., Ltd., Beijing, CN;
Chongqing Boe Optoelectronics Co., Ltd., Chongqing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
CHONGQING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Chongqing, CN;
Abstract
A thin film transistor (TFT) according to the present disclosure may include an active layer, an etch stop layer (ESL), a source electrode and a drain electrode. The active layer may include at least one first active portion, a second active portion and a third active portion located on both sides of the first active portion and connected to the first active portion. The at least one first active portion may be overlaid by the ESL, and a longitudinal width of the at least one first active portion may be less than those/that of the second active portion and/or the third active portion. The second active portion and the third active portion may be overlaid by a horizontally-extending portion of the ESL on the first active portion. A side wing contact may be formed between the second active portion and one electrode of the source electrode and the drain electrode, and/or a side wing contact may be formed between the third active portion and the other electrode of the source electrode and the drain electrode.