The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Aug. 31, 2015
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Hamza Yilmaz, Saratoga, CA (US);
Madhur Bobde, San Jose, CA (US);
Lingpeng Guan, Sunnyvale, CA (US);
Jun Hu, San Bruno, CA (US);
Jongoh Kim, Suwon, KR;
Yongping Ding, Sunnyvale, CA (US);
ALPHA AND OMEGA SEMICONDUCTOR INCORPORATED, Sunnyvale, CA (US);
Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type. A first conductivity type epitaxial layer disposed on a top surface of the substrate includes a surface shielded region above a less heavily doped voltage blocking region. A body region of a second conductivity type opposite the first conductivity type is disposed near a top surface of the surface shielded region. A first conductivity type source region is disposed near the top surface inside the body region. A drain is disposed at a bottom surface of the substrate. A gate overlaps portions of the source and body regions. Gate insulation separates the gate from the source and body regions. First and second trenches formed in the surface shielded region are lined with trench insulation material and filled with electrically conductive trench filling material. Second conductivity type buried doped regions are positioned below the first and second trenches, respectively.