The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Jan. 21, 2014
Applicant:
Satoshi Inaba, Seongnam-si, KR;
Inventor:
Satoshi Inaba, Seongnam-si, KR;
Assignee:
KABUSHIKI KAISHA TOSHIBA, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/108 (2006.01); H01L 29/94 (2006.01); H01L 29/423 (2006.01); H01L 27/24 (2006.01); H01L 21/265 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/26506 (2013.01); H01L 21/28123 (2013.01); H01L 21/3065 (2013.01); H01L 21/30608 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 29/66621 (2013.01);
Abstract
According to one embodiment, a semiconductor device includes a semiconductor substrate with a groove for forming an embedded gate therein, and a gate electrode embedded via a gate insulator film in the groove. A portion of the semiconductor substrate near the gate electrode is doped with a chemical element which is inactive in the semiconductor substrate.