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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9450058 B1

PDFFull Text
Expired
Date of Patent:
Sep. 20, 2016

Filed:

Sep. 25, 2015

Semiconductor device

Applicant:

Fujitsu Semiconductor Limited, Yokohama-shi, Kanagawa, JP;

Inventor:

Yusuke Morisaki, Kokubunji, JP;

Assignee:

FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Jarrett Stark

Assistant Examiner:

Shahed Ahmed

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 21/265 (2006.01); H01L 21/283 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42356 (2013.01); H01L 21/265 (2013.01); H01L 21/283 (2013.01); H01L 21/28123 (2013.01); H01L 21/76229 (2013.01); H01L 21/823842 (2013.01); H01L 29/0692 (2013.01); H01L 29/42364 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/78 (2013.01); H01L 21/823821 (2013.01);
Abstract

A method for manufacturing a semiconductor device includes, forming, on a substrate, an element isolation insulating film which includes a protruding portion protruding above a level of a surface of the substrate, forming a first film on the substrate and on the element isolation insulating film, polishing the first film to expose the protruding portion, forming a first resist pattern which straddles the first film and the protruding portion after polishing the first film, patterning the first film using the first resist pattern as a mask to form a first pattern, and forming a sidewall film at side surfaces of the first pattern.

Find Patent Forward Citations

Morisaki, Yusuke. (2016). Semiconductor device (U.S. Patent No. 9450058). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9450058

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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