The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

Jul. 09, 2015
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Laurent Mollard, Claix, FR;

Francois Boulard, Grenoble, FR;

Guillaume Bourgeois, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/103 (2006.01); H01L 31/18 (2006.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/1443 (2013.01); H01L 27/1446 (2013.01); H01L 27/1463 (2013.01); H01L 27/14607 (2013.01); H01L 27/14696 (2013.01); H01L 27/14698 (2013.01); H01L 31/1032 (2013.01); H01L 31/1832 (2013.01);
Abstract

A planar photodiode array including a useful layer made of CdHgTe. The useful layer includes at least two superimposed doped layers, each interface between two doped layers forming a single PN junction; the useful layer has at least one separation region, extending from the upper face of the useful layer, and separating at least two useful volumes while going through the PN junction; and beyond a predetermined depth in the useful layer, the average cadmium concentration in the useful volumes is less than the average cadmium concentration in the separation region.


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