The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

Mar. 15, 2013
Applicant:

Mie Fujitsu Semiconductor Limited, Kuwana, JP;

Inventors:

Richard S. Roy, Dublin, CA (US);

Samuel Leshner, Los Gatos, CA (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 31/00 (2006.01); G01R 31/26 (2014.01); G11C 7/00 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); G01R 31/26 (2013.01);
Abstract

A semiconductor circuit can include a plurality of arrays of transistors having differing characteristics and operating at low voltages and currents. A drain line drive signal may provide a potential to a drain line to which a selected transistor is connected. A row of drain mux circuits can provide reduced leakage current on the drain line drive signal so that more accurate current measurements may be made. A gate line drive signal may provide a potential to a gate line to which the selected transistor is connected. A column of gate line mux circuits can provide a gate line low drive signal to unselected transistors to reduce leakage current in unselected transistors so that more accurate drain current measurements may be made to the selected transistor.


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