The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Apr. 15, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Joachim Hirschler, Villach, AT;
Gudrun Stranzl, Goedersdorf, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 21/768 (2006.01); H01L 21/308 (2006.01); H01L 21/3065 (2006.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 21/3081 (2013.01); H01L 21/76898 (2013.01); H01L 23/291 (2013.01); H01L 23/293 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 21/3065 (2013.01); H01L 21/30655 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A layer arrangement in accordance with various embodiments may include: a wafer; a passivation disposed over the wafer; a protection layer disposed over at least a surface of the passivation facing away from the wafer; and a mask layer disposed over at least a surface of the protection layer facing away from the wafer, wherein the protection layer includes a material that is selectively etchable to a material of the passivation, and wherein the mask layer includes a material that is selectively etchable to the material of the protection layer.