The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Nov. 09, 2015
Renesas Electronics Corporation, Tokyo, JP;
Sho Nakanishi, Ibaraki, JP;
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Abstract
In a back surface hole injection type diode, by more effectively securing the effect of hole injection from the back surface of a semiconductor substrate, the performance of a semiconductor device is improved. In the semiconductor device, in a diode formed of a P-N junction including an anode P-type layer formed in the main surface of a semiconductor substrate and a back surface N-type layer formed in the back surface of the semiconductor substrate, a back surface P-type layer is formed in the back surface, and a surface P-type layer is formed in the main surface right above the back surface P-type layer to thereby promote the effect of hole injection from the back surface.