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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9449851 B1

PDFFull Text
Date of Patent:
Sep. 20, 2016

Filed:

Aug. 24, 2015

Local doping of two-dimensional materials

Applicants:

Dillon Wong, Alameda, CA (US);

Jairo Velasco, Jr., Berkeley, CA (US);

Long Ju, Berkeley, CA (US);

Salman Kahn, Tracy, CA (US);

Juwon Lee, Berkeley, CA (US);

Chad E. Germany, Richmond, CA (US);

Alexander K. Zettl, Kensington, CA (US);

Feng Wang, Fremont, CA (US);

Michael F. Crommie, Oakland, CA (US);

Inventors:

Dillon Wong, Alameda, CA (US);

Jairo Velasco, Jr., Berkeley, CA (US);

Long Ju, Berkeley, CA (US);

Salman Kahn, Tracy, CA (US);

Juwon Lee, Berkeley, CA (US);

Chad E. Germany, Richmond, CA (US);

Alexander K. Zettl, Kensington, CA (US);

Feng Wang, Fremont, CA (US);

Michael F. Crommie, Oakland, CA (US);

Assignee:

The Regents of the University of California, Oakland, CA (US);

Attorney:

Lawrence Berkeley National Laboratory

Primary Examiner:

John C Ingham

Assistant Examiner:

Frederick B Hargrove

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/326 (2006.01); H01L 21/479 (2006.01); H01L 21/225 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/326 (2013.01); H01L 21/2254 (2013.01); H01L 21/2256 (2013.01); H01L 21/479 (2013.01); H01L 29/1606 (2013.01); H01L 21/02381 (2013.01); H01L 21/02488 (2013.01); H01L 21/02502 (2013.01); H01L 21/02527 (2013.01); H01L 21/02568 (2013.01);
Abstract

This disclosure provides systems, methods, and apparatus related to locally doping two-dimensional (2D) materials. In one aspect, an assembly including a substrate, a first insulator disposed on the substrate, a second insulator disposed on the first insulator, and a 2D material disposed on the second insulator is formed. A first voltage is applied between the 2D material and the substrate. With the first voltage applied between the 2D material and the substrate, a second voltage is applied between the 2D material and a probe positioned proximate the 2D material. The second voltage between the 2D material and the probe is removed. The first voltage between the 2D material and the substrate is removed. A portion of the 2D material proximate the probe when the second voltage was applied has a different electron density compared to a remainder of the 2D material.

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