The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Dec. 09, 2013
Hrl Laboratories, Llc., Malibu, CA (US);
Dean C. Regan, Simi Valley, CA (US);
Keisuke Shinohara, Thousand Oaks, CA (US);
Yan Tang, Oak Park, CA (US);
Miroslav Micovic, Thousand Oaks, CA (US);
HRL Laboratories, LLC, Malibu, CA (US);
Abstract
A self-aligned process for locating a stem of a T-shaped gate relative to source and drain contacts of a FET or HEMT. The gate stem is located asymmetrically in some embodiments and in such embodiments the stem of the T-shaped gate is located relative to drain and source contacts of the device by forming a plurality of sidewall spacers, with more sidewall spacers being formed on the drain side of the stem than are formed on the source side of the stem. Additionally the gate stem preferably has a high aspect ratio to improve the performance of the resulting FET or HEMT. Drain and source contacts are preferably formed of an n+ semiconductor material.