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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9449818 B1

PDFFull Text
Date of Patent:
Sep. 20, 2016

Filed:

Mar. 11, 2014

Double sided si(ge)/sapphire/iii-nitride hybrid structure

Applicant:

The United States of America As Represented BY the Administrator of the National Aeronautics and Space Administration, Washington, DC (US);

Inventors:

Yeonjoon Park, Yorktown, VA (US);

Sang Hyouk Choi, Poquoson, VA (US);

Assignee:

The United States of America as represented by the Administrator of the National Aeronautics and Space Administration, Washington, DC (US);

Attorneys:

Andrea Z. Warmbier

Jennifer L. Riley

Primary Examiner:

Stephen W Smoot

Int. Cl.
CPC ...
H01L 29/267 (2006.01); H01L 31/0336 (2006.01); H01L 21/02 (2006.01); H01L 31/12 (2006.01); H01L 27/15 (2006.01); H01L 31/028 (2006.01); H01L 31/0368 (2006.01); H01L 31/18 (2006.01); H01L 25/16 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02554 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/02433 (2013.01); H01L 21/02532 (2013.01); H01L 27/15 (2013.01); H01L 29/267 (2013.01); H01L 31/028 (2013.01); H01L 31/0336 (2013.01); H01L 31/03682 (2013.01); H01L 31/125 (2013.01); H01L 31/1804 (2013.01); H01L 31/1812 (2013.01); H01L 31/1848 (2013.01); H01L 31/1852 (2013.01); H01L 25/167 (2013.01); H01L 33/007 (2013.01); H01L 2924/0002 (2013.01); Y02E 10/544 (2013.01); Y02E 10/546 (2013.01); Y02E 10/547 (2013.01); Y02P 70/521 (2015.11);
Abstract

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

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