The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Oct. 17, 2013
Seoul Viosys Co., Ltd., Ansan-si, KR;
Seung Kyu Choi, Ansan-si, KR;
Woo Chul Kwak, Ansan-si, KR;
Chae Hon Kim, Ansan-si, KR;
Jung Whan Jung, Ansan-si, KR;
Seoul Viosys Co., Ltd., Ansan-si, KR;
Abstract
Exemplary embodiments of the present invention relate to a method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, including disposing a substrate in a chamber, growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure, growing a gallium nitride-based active layer on the first conductivity-type gallium nitride-based semiconductor layer at a second chamber pressure higher than the first chamber pressure, and growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure lower than the second chamber pressure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile