The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Jun. 26, 2012
Applicants:
Horacio P. Gasquet, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Inventors:
Horacio P. Gasquet, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Assignee:
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 29/06 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 29/06 (2013.01); H01L 21/28273 (2013.01); H01L 29/42332 (2013.01); G11C 16/0416 (2013.01); G11C 2216/06 (2013.01);
Abstract
A method includes over-programming thin film storage (TFS) memory cells on a semiconductor wafer with a first voltage that is higher than a highest voltage used to program the memory cells during normal operation of the memory cells. With the memory cells in an over-programmed state, the wafer is exposed to a first temperature above a product specification temperature for a period of time sufficient to induce redistribution of charge among storage elements in the memory cells.