The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

Aug. 06, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hyung-Sik You, Hwaseong-si, KR;

Jung-Bae Lee, Seongnam-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/40 (2006.01); G11C 11/402 (2006.01); G11C 11/406 (2006.01); G11C 11/4091 (2006.01);
U.S. Cl.
CPC ...
G11C 11/402 (2013.01); G11C 11/406 (2013.01); G11C 11/4091 (2013.01); G11C 2207/002 (2013.01); G11C 2211/4063 (2013.01); G11C 2211/4065 (2013.01);
Abstract

A semiconductor memory device is provided which includes a sense amplifier, a bit line connected to a plurality of memory cells of a first memory block, a complementary bit line connected to a plurality of memory cells of a second memory block, a first switch configured to connect the bit line to the sense amplifier, and a second switch configured to connect the complementary bit line to the sense amplifier. The first switch is configured to electrically separate the bit line from the sense amplifier when the second memory block performs a refresh operation.


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