The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

Jun. 24, 2015
Applicant:

Fujikura Ltd., Tokyo, JP;

Inventors:

Kensuke Ogawa, Sakura, JP;

Kazuhiro Goi, Sakura, JP;

Hiroyuki Kusaka, Sakura, JP;

Assignee:

FUJIKURA LTD., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/025 (2006.01); G02B 6/122 (2006.01); G02F 1/015 (2006.01); G02B 6/12 (2006.01); G02F 1/21 (2006.01);
U.S. Cl.
CPC ...
G02F 1/025 (2013.01); G02B 6/1228 (2013.01); G02F 1/015 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12097 (2013.01); G02B 2006/12159 (2013.01); G02F 2001/0152 (2013.01); G02F 2001/212 (2013.01);
Abstract

An optical waveguide element includes: a rib waveguide and a pair of slab portions including a first slab portion and a second slab portion connected to both sides of the rib portion so as to sandwich the rib portion. The rib portion has a cross-sectional dimension which allows the propagation of a fundamental mode and a higher order mode in a predetermined single polarization state, and has a first P-type semiconductor and a first N-type semiconductor forming a PN junction, the first slab portion has a second P-type semiconductor and a P-type conductor connected to each other, the second P-type semiconductor is connected to the first P-type semiconductor of the rib portion, the second slab portion has a second N-type semiconductor and an N-type conductor connected to each other, and the second N-type semiconductor is connected to the first N-type semiconductor of the rib portion.


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