The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Dec. 04, 2008
Jae-woo Kim, Newport News, VA (US);
Sang H. Choi, Sr., Poquoson, VA (US);
Peter T. Lillehei, Yorktown, VA (US);
Sang-hyon Chu, Newport News, VA (US);
Yeonjoon Park, Yorktown, VA (US);
Glen C. King, Williamsburg, VA (US);
James R. Elliott, Yorktown, VA (US);
Jae-Woo Kim, Newport News, VA (US);
Sang H. Choi, Sr., Poquoson, VA (US);
Peter T. Lillehei, Yorktown, VA (US);
Sang-Hyon Chu, Newport News, VA (US);
Yeonjoon Park, Yorktown, VA (US);
Glen C. King, Williamsburg, VA (US);
James R. Elliott, Yorktown, VA (US);
Abstract
Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBHto increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.