The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 20, 2016

Filed:

May. 27, 2014
Applicants:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Stmicroelectronics (Malta) Ltd, Kirkop, MT;

Inventors:

Kevin Formosa, Zabbar, MT;

Luca Maggi, Garlate, IT;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/84 (2006.01); B81B 7/00 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); B81B 3/00 (2006.01); B81C 1/00 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 21/56 (2006.01);
U.S. Cl.
CPC ...
B81B 7/007 (2013.01); B81B 3/0094 (2013.01); B81C 1/00238 (2013.01); B81C 1/00301 (2013.01); H01L 24/94 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 29/84 (2013.01); B81B 2207/012 (2013.01); B81B 2207/07 (2013.01); B81B 2207/095 (2013.01); B81B 2207/097 (2013.01); B81C 2203/00 (2013.01); B81C 2203/0136 (2013.01); B81C 2203/0792 (2013.01); H01L 21/561 (2013.01); H01L 23/3114 (2013.01); H01L 24/73 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/48145 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81005 (2013.01); H01L 2224/94 (2013.01); H01L 2224/97 (2013.01); H01L 2225/06506 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06524 (2013.01); H01L 2225/06548 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/181 (2013.01);
Abstract

A wafer-level packaging, comprising: a first semiconductor body integrating a MEMS structure; a second semiconductor body, including a surface electrical-contact region and an ASIC coupled to the MEMS structure and to said electrical-contact region; a first coating layer, made of resin, which englobes and protects the first body, the second body, and the electrical-contact region; at least one first conductive through via, which extends through the first coating layer in an area corresponding, and electrically coupled, to the first electrical-contact region; an electrical-contact pad, which extends over the first coating layer, electrically coupled to the first conductive through via; a third semiconductor body, integrating an electronic circuit, glued on the first coating layer; a second coating layer, made of resin, which englobes and protects the third body; at least one second conductive through via, which extends completely through the second coating layer in an area corresponding, and electrically coupled, to the electrical-contact pad; and a further electrical-contact pad electrically coupled to the second conductive through via.


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