The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Nov. 26, 2012
Murata Manufacturing Co., Ltd., Kyoto, JP;
Eigo Tange, Kyoto, JP;
Shigeki Koya, Kyoto, JP;
Yasushi Shigeno, Kyoto, JP;
Akishige Nakajima, Kyoto, JP;
MURATA MANUFACTURING CO., LTD., Kyoto, JP;
Abstract
Reduction of intermodulation distortion in a high-frequency switch is achieved. A semiconductor device () includes an antenna terminal (ANT_LB), plural external terminals (RX_LB, TX_LB, TRX_LB, TERM_LB), plural first high-frequency switches (to), and plural control terminals. Each first high-frequency switch includes plural first field-effect transistors, plural first resistors (Rg_to Rg_) connected to the gate terminals of the first field-effect transistors, and a second resistor (Rc) disposed between the corresponding control terminal and the first resistors. The second resistor in the first high-frequency switch disposed between the first terminal supplied with an RF transmission signal and an RF reception signal of a frequency division duplex system and the antenna terminal is configured so that linearity of current-voltage characteristics thereof is higher than linearity of current-voltage characteristics of the first resistor.