The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Dec. 10, 2013
General Electric Company, Schenectady, NY (US);
Robert Gregory Wagoner, Roanoke, VA (US);
Allen Michael Ritter, Roanoke, VA (US);
Harold Robert Schnetzka, Simpsonville, SC (US);
General Electric Company, Schenectady, NY (US);
Abstract
High performance gate drives and methods for driving semiconductor switching elements, such as insulated gate bipolar transistors (IGBTs), are provided. The gate drive can control the voltage applied to the gate of the IGBT to one or more intermediate voltages near the threshold voltage of the IGBT to control dv/dt of the collector-emitter voltage during and the di/dt of the collector current turn off. For instance, a voltage level between the turn on voltage and the turn off voltage can be applied for a first time period to control dv/dt of the collector-emitter voltage and di/dt of the collector current during turn off. Another voltage level between the turn on voltage and the turn off voltage can be applied for a second time period during reverse recovery of a freewheeling diode coupled in parallel with the IGBT.