The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Apr. 05, 2013
Applicant:

Fairchild Semiconductor Corporation, San Jose, CA (US);

Inventors:

Ion Opris, San Jose, CA (US);

Hai Tao, Sunnyvale, CA (US);

Shungneng Lee, Sunnyvale, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 1/00 (2006.01); H03F 1/34 (2006.01); H03F 3/45 (2006.01); H03F 3/70 (2006.01); G01C 19/56 (2012.01); H02N 1/00 (2006.01); G01C 19/5776 (2012.01);
U.S. Cl.
CPC ...
H03F 1/00 (2013.01); G01C 19/5776 (2013.01); G01P 9/04 (2013.01); H02N 1/00 (2013.01); H03F 1/34 (2013.01); H03F 3/45475 (2013.01); H03F 3/70 (2013.01); H03F 2200/294 (2013.01);
Abstract

This document discusses, among other things, apparatus and methods for a front-end charge amplifier. In certain examples, a front-end charge amplifier for a microelectromechanical system (MEMS) device can include a charge amplifier configured to couple to the MEMS device and to provide sense information of a proof mass of the MEMS device, a feedback circuit configured to receive the sense information and to provide feedback to an input of the charge amplifier, and wherein the charge amplifier includes a transfer function having a first pole at a first frequency, a second pole at a second frequency, and one zero at a third frequency.


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