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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9444044 B1

PDFFull Text
Date of Patent:
Sep. 13, 2016

Filed:

Mar. 10, 2015

Resistive nonvolatile storage device, manufacturing method for same, and resistive nonvolatile storage apparatus

Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Yukio Hayakawa, Kyoto, JP;

Yoshio Kawashima, Osaka, JP;

Assignee:

PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD., Osaka, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Fernando L Toledo

Assistant Examiner:

Neil Prasad

Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 27/2409 (2013.01); H01L 27/2436 (2013.01); H01L 27/2481 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1625 (2013.01); H01L 45/1675 (2013.01);
Abstract

A resistive nonvolatile storage device includes a first interlayer insulating layer provided above a substrate, a contact hole penetrating through the first interlayer insulating layer, a contact layer wholly covering a bottom surface and a sidewall surface of the contact hole and extending to at least partially cover an upper surface of the first interlayer insulating layer, a contact plug filled in the contact hole, an upper surface of the contact plug being positioned below an upper surface of the contact layer, a lower electrode provided on both the contact plug and the contact layer that is provided on the part of the upper surface of the first interlayer insulating layer, and a resistance change layer provided on the lower electrode, and an upper electrode that is provided on the resistance change layer.

Find Patent Forward Citations

Hayakawa, Yukio. (2016). Resistive nonvolatile storage device, manufacturing method for same, and resistive nonvolatile storage apparatus (U.S. Patent No. 9444044). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9444044

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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