The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Jun. 20, 2014
Applicants:

Yoonchul Cho, Seoul, KR;

Ken Tokashiki, Seongnam-si, KR;

Inventors:

Yoonchul Cho, Seoul, KR;

Ken Tokashiki, Seongnam-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01);
U.S. Cl.
CPC ...
H01L 43/02 (2013.01); H01L 27/226 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/12 (2013.01);
Abstract

Magnetic memory devices and methods of manufacturing the same are disclosed. A method may include forming a magnetic tunnel junction layer on a substrate, forming mask patterns on the magnetic tunnel junction layer, and sequentially performing a plurality of ion implantation processes using the mask patterns as ion implantation masks to form an isolation region in the magnetic tunnel junction layer. The isolation region may thereby define magnetic tunnel junction parts that are disposed under corresponding ones of the mask patterns. A magnetic memory device may include a plurality of magnetic tunnel junction parts electrically and magnetically isolated from each other through the isolation region.


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