The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Oct. 04, 2011
Applicant:
Donald Dibra, Munich, DE;
Inventor:
Donald Dibra, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 35/32 (2006.01); H01L 35/34 (2006.01); H01L 27/16 (2006.01); H01L 23/38 (2006.01);
U.S. Cl.
CPC ...
H01L 35/32 (2013.01); H01L 23/38 (2013.01); H01L 27/16 (2013.01); H01L 35/34 (2013.01); H01L 2224/16 (2013.01);
Abstract
A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate.