The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Apr. 24, 2015
Applicants:

Tsinghua University, Beijing, CN;

Hon Hai Precision Industry Co., Ltd., New Taipei, TW;

Inventors:

Jun Zhu, Beijing, CN;

Hao-Su Zhang, Beijing, CN;

Zhen-Dong Zhu, Beijing, CN;

Qun-Qing Li, Beijing, CN;

Guo-Fan Jin, Beijing, CN;

Shou-Shan Fan, Beijing, CN;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/44 (2010.01); H01L 33/58 (2010.01); H01L 33/22 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 33/22 (2013.01); H01L 33/38 (2013.01); H01L 33/58 (2013.01); H01L 2933/0083 (2013.01);
Abstract

A light emitting diode includes a first semiconductor layer, an active layer, a second semiconductor layer, a protective layer, and a cermet layer. The active layer is on the first semiconductor layer. The second semiconductor layer is on the active layer. the protective layer is located on the semiconductor layer. The cermet layer is located on the protective layer. A first electrode covers entire surface of the first semiconductor layer away from the active layer. A second electrode is electrically connected to the second semiconductor layer.


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