The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Mar. 19, 2014
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Noriyuki Nakamura, Sakata, JP;

Terunao Hanaoka, Suwa, JP;

Kunihiko Yano, Shiojiri, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0216 (2014.01); H01L 31/02 (2006.01); A61B 5/1455 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02165 (2013.01); A61B 5/14552 (2013.01); H01L 31/02024 (2013.01); A61B 2562/0238 (2013.01); A61B 2562/046 (2013.01); A61B 2562/12 (2013.01); A61B 2562/164 (2013.01);
Abstract

A method for manufacturing a spectroscopic sensor includes: (a) forming a light receiving element on a semiconductor substrate; (b) forming an angle restricting filter on the semiconductor substrate; and (c) forming a spectroscopic filter on the angle restricting filter. The step (c) of forming a spectroscopic filter includes: (c1) forming a first light transmitting film having a peripheral edge that overlaps a light blocking portion in plan view ox the semiconductor substrate by a lift-off method; and (c2) forming a second light transmitting film at a position spaced apart from the first light transmitting film in plan view of the semiconductor substrate by the lift-off method, the second light transmitting film having a peripheral edge that overlaps the light blocking portion in plan view of the semiconductor substrate.


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