The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Mar. 04, 2014
Applicant:
E Ink Holdings Inc., Hsinchu, TW;
Inventors:
Assignee:
E Ink Holdings Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/786 (2006.01); H01L 29/26 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); H01L 29/26 (2013.01);
Abstract
A thin file transistor includes a gate electrode, a source electrode, a drain electrode, a gate-insulating layer, and an oxide semiconductor layer. The oxide semiconductor layer includes indium-gallium-zinc oxide with a formula of InGaZnO, in which x, y and z satisfy the following formulas 1.5≦(y/x)≦2 and 1.5≦(y/z)≦2. The gate-insulating layer is positioned between the gate electrode and the oxide semiconductor layer. The source electrode and the drain electrode are respectively connected to two different sides of the oxide semiconductor layer.