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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9443979 B1

PDFFull Text
Date of Patent:
Sep. 13, 2016

Filed:

Aug. 08, 2014

Semiconductor devices including trench walls having multiple slopes

Applicants:

Sang-jine Park, Yongin-si, KR;

Bo-un Yoon, Seoul, KR;

Ha-young Jeon, Hwasung-si, KR;

Byung-kwon Cho, Suwon-si, KR;

Jeong-nam Han, Seoul, KR;

Inventors:

Sang-Jine Park, Yongin-si, KR;

Bo-Un Yoon, Seoul, KR;

Ha-Young Jeon, Hwasung-si, KR;

Byung-Kwon Cho, Suwon-si, KR;

Jeong-Nam Han, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel & Sibley, P.A

Primary Examiner:

Thanhha Pham

Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/08 (2006.01); H01L 21/28 (2006.01); H01L 27/088 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7851 (2013.01); H01L 21/28114 (2013.01); H01L 27/0886 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/4958 (2013.01); H01L 29/4966 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device includes a gate spacer defining a trench. The trench includes a first part and a second part sequentially positioned on a substrate. An inner surface of the first part has a slope of an acute angle and an inner surface of the second part has a slope of a right angle or obtuse angle with respect to the substrate. A gate electrode fills at least a portion of the trench.

Find Patent Forward Citations

Quick Actions:

Park, Sang-Jine. (2016). Semiconductor devices including trench walls having multiple slopes (U.S. Patent No. 9443979). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9443979

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