The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Nov. 12, 2014
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Geeng-Lih Lin, Zhudong Township, TW;
Kwang-Ming Lin, Hsinchu, TW;
Shang-Hui Tu, Jhubei, TW;
Jui-Chun Chang, Hsinchu, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 21/74 (2006.01); H01L 21/8249 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/417 (2013.01); H01L 21/743 (2013.01); H01L 21/8249 (2013.01); H01L 27/0623 (2013.01); H01L 29/0684 (2013.01);
Abstract
The invention provides a semiconductor device. A buried layer is formed in a substrate. A first deep trench contact structure is formed in the substrate. The first deep trench contact structure comprises a conductor and a liner layer formed on a sidewall of the conductor. A bottom surface of the first deep trench contact structure is in contact with the buried layer.