The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9443923 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 13, 2016

Filed:

May. 07, 2014
Applicant:

Raytheon Company, Waltham, MA (US);

Inventor:

Jeffrey M. Peterson, Santa Barbara, CA (US);

Assignee:

RAYTHEON COMPANY, Waltham, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/46 (2006.01); H01L 29/04 (2006.01); H01L 29/32 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/04 (2013.01); H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02562 (2013.01); H01L 21/02631 (2013.01); H01L 29/045 (2013.01); H01L 29/32 (2013.01);
Abstract

A semiconductor structure having a first semiconductor body having an upper surface with a non <211> crystallographic orientation and a second semiconductor body having a surface with a <211> crystallographic orientation, the surface of the second semiconductor body being bonded to a bottom surface of the first semiconductor body. A layer comprising CdTe is epitaxially disposed on the upper surface of the second semiconductor body. The second semiconductor body is CZ silicon, has a thickness less than 10 microns and has a diameter of at least eight inches. A getter having micro-cavities has a bottom surface formed on an upper surface of the first semiconductor body and has an upper surface bonded to a bottom surface of the second semiconductor body.


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