The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Nov. 04, 2015
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Chia-Ying Liu, Hsinchu, TW;

Chin-Poh Pang, Pleasanton, CA (US);

Chih-Wei Hsiung, San Jose, CA (US);

Vincent Venezia, Los Gatos, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/369 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14643 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14609 (2013.01); H01L 27/14621 (2013.01); H01L 27/14683 (2013.01); H01L 27/14685 (2013.01); H04N 5/3696 (2013.01);
Abstract

An improved back side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor, and associated methods, improve phase detecting capability. The BSI CMOS image sensor has an array of pixels that include a phase detecting pixel (PDP), a composite grid formed of a buried color filter array and composite metal/oxide grid, and a photodiode implant corresponding to the PDP. A PDP mask is fabricated with a deep trench isolation (DTI) structure proximate the PDP and positioned to mask at least part of the photodiode implant such that the PDP mask is positioned between the composite grid and the photodiode implant.


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