The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Jun. 03, 2014
Applicants:

Mark Bachman, Wilmington, DE (US);

John W. Osenbach, Wilmington, PA (US);

Inventors:

Mark Bachman, Wilmington, DE (US);

John W. Osenbach, Wilmington, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/81 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81801 (2013.01); H01L 2924/0001 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01012 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01021 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01027 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01);
Abstract

A method of forming an electronic device, comprising providing a semiconductor substrate having a first contact and an undoped electroplated lead-free solder bump formed on the first contact. The method also comprises providing a device package substrate having a second contact and a doped lead-free solder layer on the second contact comprising a fourth row transition metal dopant. The method further comprises melting the solder bump and the solder layer while the solder layer and the solder bump are in contact, thereby forming a doped solder bump consisting essentially of Sn, one or both of Ag and Cu, and the fourth row transition metal dopant.


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