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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9443790 B1

PDFFull Text
Date of Patent:
Sep. 13, 2016

Filed:

Jan. 22, 2014

Semiconductor device

Applicant:

Ps4 Luxco S.a.r.l., Luxembourg, LU;

Inventor:

Osamu Fujita, Tokyo, JP;

Assignee:

PS4 Luxco S.a.r.l., Luxembourg, LU;

Attorney:

Stoel Rives LLP

Primary Examiner:

Caleb Henry

Assistant Examiner:

Mounir Amer

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/538 (2006.01); H01L 21/3065 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 27/06 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/481 (2013.01); H01L 21/30655 (2013.01); H01L 21/76898 (2013.01); H01L 21/823481 (2013.01); H01L 23/5384 (2013.01); H01L 24/81 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 27/0617 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/14 (2013.01); H01L 24/16 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/13009 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16245 (2013.01); H01L 2224/81095 (2013.01); H01L 2224/81193 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81907 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/1437 (2013.01); H01L 2924/1438 (2013.01); H01L 2924/1461 (2013.01); H01L 2924/14335 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate having a first surface, a through silicon via (TSV) that is formed so that at least a part thereof penetrates through the semiconductor substrate, and an insulation ring. The insulation ring is formed so as to penetrate through the semiconductor substrate and so as to surround the TSV. The insulation ring includes a tapered portion and a vertical portion. The tapered portion has a sectional area which is gradually decreased from the first surface toward a thickness direction of the semiconductor substrate. The vertical portion has a constant sectional area smaller than the tapered portion.

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