The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 13, 2016

Filed:

Sep. 08, 2015
Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, JP;

Inventors:

Yuji Takematsu, Hino, JP;

Katsuhiko Yanagawa, Hino, JP;

Kenji Okamoto, Hachioji, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/29 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 29/16 (2006.01); H01L 23/28 (2006.01);
U.S. Cl.
CPC ...
H01L 23/295 (2013.01); H01L 23/3135 (2013.01); H01L 24/01 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); H01L 29/1608 (2013.01); H01L 23/28 (2013.01); H01L 23/293 (2013.01); H01L 2924/351 (2013.01);
Abstract

A semiconductor device includes a molded body obtained by sealing, with a sealing material, a member including a semiconductor element, an insulating substrate which is bonded to one surface of the semiconductor element, and a printed circuit board which is used for a connection to an external circuit and is bonded to another surface of the semiconductor element. The sealing material includes a first sealing material which is a nanocomposite resin including an epoxy base resin, a curing agent, and an inorganic filler with an average particle size of 1 nm to 100 nm; and a second sealing material which is a thermosetting resin, a thermoplastic resin, or a mixture thereof without an inorganic filler. The sealing material is less likely to be degraded by thermal oxidation, even when the semiconductor element operates at a high temperature of 175° C. or higher, is crack resistant, and has high reliability and durability.


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